Growth of electron-hole-droplet luminescence in Ge excited by fast optical pulses

doi:10.1016/0038-1098(76)91084-X

Solid State Communications

Volume 19, Issue 7, July 1976, Pages 603-606

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Abstract

Time resolved luminescence experiments show a several hundred nano-second risetime for electron-hole-droplet radiation from germanium excited by 15 nsec intense optical pulses. The rise time is found to exhibit a remarkably weak dependence on excitation intensity, pulse width, and temperature. Our results indicate that the electron-hole-liquid is formed from an expanding lower density fluid of electrons and holes which is far from an ideal gas.

References (17)

THOMAS G.A., FROVA A., HENSEL J.C., MILLER R.E. & LEE P.A. (to be...
Y.A. Pokrovskii
Phys. Status. Solidi (a)
(1972)
M. Voos
J. Frenkel
Kinetic Theory of Liquids
(1955)
R.N. Silver
Phys. Rev.
(1975)
R.N. Silver
Phys. Rev.
(1975)
A.S. Alekseev et al.
A.H. Dayem et al.
Bull. Amer. Phys. Soc.
(1975)
Phys. Rev. Lett.
(1975)
R.M. Westervelt et al.
Phys. Rev. Lett.
(1974)
R.M. Westervelt et al.
Phys. Rev. Lett.
(1974)
C. Benoit ÀLa Guillaume et al.
Solid State Commun.
(1974)

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The Electron-Hole Liquid in Semiconductors: Experimental Aspects
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^∗: Permanent Address: Groupe de Physique des Solides de l'Ecole Normale Superieure, Tour 23, 2 Place Jussieu, 75005, Paris France.

^†: Work performed under the auspices of Energy Research and Development Administration.

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Growth of electron-hole-droplet luminescence in Ge excited by fast optical pulses

Abstract

Phys. Status. Solidi (a)

Kinetic Theory of Liquids

Phys. Rev.

Phys. Rev.

Bull. Amer. Phys. Soc.

Phys. Rev. Lett.

Phys. Rev. Lett.

Phys. Rev. Lett.

Solid State Commun.