Elsevier

Surface Science

Volume 113, Issues 1–3, 1 January 1982, Pages 10-15
Surface Science

Measurements of the quantized Hall steps in Si at the ppm level

https://doi.org/10.1016/0039-6028(82)90555-6Get rights and content

Abstract

Hall voltages of n-channel (100)Si MOSFETs have been studied with a high sensitivity potentiometric method. These experiments reveal Hall steps flat to within at least 1 ppm at a temperature of 1.5 K. and magnetic field of 13 T. In addition, unanticipated features have been observed near the edges of the Hall steps. Possible explanations for these effects will be discussed.

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Cited by (3)

Present address: Department of Physics, Saint John's University, Collegeville, Minnesota 56321, USA.

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