Elsevier

Solid-State Electronics

Volume 37, Issues 4–6, April–June 1994, Pages 693-695
Solid-State Electronics

D.C. transport in intense, in-plane terahertz electric fields in AlxGa1−xAs heterostructures at 300 K

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Abstract

We report 300 K studies of the dependence of the in-plane, d.c. conductivity, σd.c. (Eω), of a quasi 2D electron gas on the amplitude Eω and frequency of intense, far-infrared fields (ω/2π = 0.24−3.5 THz). We measure σd.c. (EωEd.c.), where Ed.c. is a small sensing field, and obser monotonic decrease in σd.c. with increasing Eω. Although a simple scaling ansatz collapses the measured σd.c. (Eω) data onto a single curve for frequencies from 0.25–3.45 THz (at low to moderate scaled fields), the decrease in conductivity is substantially more rapid than expected from comparison to similar data taken by Masselink et al. [Solid-St. Electron.31, 337 (1988)] at 35 GHz. We tentatively attribute this difference to effects of a high-frequency modulation in the electron temperature.

References (5)

  • W.T. Masselink et al.

    Solid-St. Electron.

    (1988)
  • N.G. Asmar et al.,...
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