An improved method of stirring for LPE growth

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Abstract

A new method of moving the crystal in the liquid during growth is presented. The verical substrate moves in its plane and describes a “canted figure eight”. Edge effects are reduced since a point near the rim is only periodically leading with regard to the fluid motion. Calculations with a simple model confirm this idea. An apparatus is constructed and tests are performed by growing (Sm,Y)3 (Fe,Ga)5 O12 epitaxial layers. The results show a very advantageous surface yield compared to the theoretical model and other equipment that has been proposed to improved growth with the substrate in a vertical plane. Moreover, by slowly lifting the substrate out of the bath, no flux droplets remain, giving clean surfaces without mesa growth.

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Research subsidized by the Belgian Institute for Advancement of Scientific Research in Industry and Agriculture (IWONL-IRSIA) and Bell Telephone Mfg. Co, Antwerp. Belgium.

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