Measurement of the Fano factor for protons on silicon

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Abstract

The Fano factor for protons has been measured for silicon with a surface barrier semiconductor detector at 87 K over the energy range of Ep = 0.989–4.537 MeV. The fwhm of peaks in the spectra observed were corrected for effects of plasma and of charge collection. As a result of the analysis, the value of the Fano factor was obtained as 0.16±0.04. However, the value of the corrected fwhm at Ep = 0, estimated by extrapolation, cannot be accounted for by the effect of atomic collision.

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