Nuclear Instruments and Methods in Physics Research
Volumes 209–210, Part 2, 1–15 May 1983, Pages 731-736
Metastable solid solutions of antimony in (100) silicon
References (13)
- et al.
J. Appl. Phys.
(1979) - et al.
Appl. Phys.
(1978) - et al.
Microscopy of Semiconducting Materials
et al. - et al.
Metastable Materials Formation by Ion Implantation
- J.S. Williams and K.T. Short, to be published in J. Appl....
- et al.
Appl. Phys. Lett.
(1978)
There are more references available in the full text version of this article.
Cited by (24)
Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
2021, Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in NanoelectronicsHigh frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(1 0 0) matrix
2005, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsIon implantation of semiconductors
1998, Materials Science and Engineering: ARange profiles and lattice location of MeV implant of Sb in Si (1 0 0)
1998, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsStrain distribution in As<sup>+</sup> and Sb<sup>+</sup> ion implanted and annealed 〈100〉 Si
1993, Nuclear Inst. and Methods in Physics Research, BPrecipitation and segregation of Sb at Si-SiO<inf>2</inf> interfaces during thermal oxidation
1992, Nuclear Inst. and Methods in Physics Research, B
Copyright © 1983 Published by Elsevier B.V.