Thermal- and radiation-stability of hydrogen-implanted silicon standards for ion-beam analysis

https://doi.org/10.1016/0168-583X(84)90008-9Get rights and content

Abstract

The effect of thermal annealing and particle radiation on the depth profile of 25 keV H+ implanted into crystalline and ion-beam amorphised silicon has been studied via the 1H(15N, αγ)12C reaction. Out-diffusion of hydrogen from crystalline silicon was observed after annealing at 100 °C for 45 min. The corresponding temperature for ion-beam (300 keV, 84Kr2+) amorphised silicon was between 300 and 500 °C. Radiation damage produced by 3 × 1015 6.4 MeV 15N2+ ion cm−2 lead to effective trapping of the hydrogen in crystalline silicon whilst 1.1 × 1015 300 keV Kr2+ ions cm−2 gave rise to significant spreading.

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