A method for analysis and profiling of boron, carbon and oxygen impurities in semiconductor wafers by recoil atoms in heavy ion beams

https://doi.org/10.1016/0168-583X(84)90585-8Get rights and content

Abstract

A method based on identification of recoil atoms in heavy ion beams, by using a (ΔE, E) measuring system, is described. The two parameter (ΔE, E) spectra, obtained with the aid of a computer, shows a good separation between carbon and oxygen recoils originating from a 300 μ;m thick silicon wafer bombarded with a 70 MeV sulphur beam. Profiling depths 10–20 μm and sensitivities close to 1016 atoms/cm are estimated.

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