Detection of electronic perturbations in silicon after EC decay of 111In observed by PAC

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Abstract

Using the perturbed γ-γ angular correlation technique (PAC), the structural and electronic surroundings of a probe atom can be monitored on a microscopic scale. Si crystals have been doped by implantation with radioactive 111In atoms. Electronic perturbations produced by the EC decay of 111In to 111Cd (“decay after-effect”) have been studied as a function of temperature and carrier concentration in intrinsic, p-type and n-type Si. This effect may be a tool to study the carrier concentration and mobility in semiconductors in an atomistic, time differential way.

References (9)

  • J.P. Biersack et al.

    Nucl. Instr. and Meth.

    (1980)
  • F. Falk et al.

    Nucl. Phys.

    (1970)
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Present address: Atomic Energy of Canada Limited, Chalk River Nuclear Laboratories, Chalk River, Ontario, Canada, KOJ 1JO.

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