Channeling study of laser-induced damage in GaP

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Abstract

The damage induced by excimer-laser irradiation in a GaP single crystal is studied by channeling and Rutherford backscattering. With this technique, the displacements of Ga and P atoms are observed at a laser pulse energy as low as W = 0.1 J/cm2 At W = 0.3–0.4 J/cm2 the 40–60 nm surface layer is strongly randomized. Possible mechanisms for the damage production are discussed.

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Department of Physics, Moscow State University, Moscow 117234, USSR.

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