Channeling study of laser-induced damage in GaP
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Cited by (2)
Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP
1988, Nuclear Inst. and Methods in Physics Research, BLaser-induced defect formation in semiconductors
1992, Applied Physics A Solids and Surfaces
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Department of Physics, Moscow State University, Moscow 117234, USSR.
Copyright © 1986 Published by Elsevier B.V.