Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP

doi:10.1016/0168-583X(88)90696-9

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Volume 33, Issues 1–4, 2 June 1988, Pages 844-847

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Abstract

Channeling was used for the study of laser-induced damage in GaAs and GaP samples with different crystallographic orientations of the surface. The greatest damage was observed for (111) GaAs and (111) GaP samples. Possible mechanisms for the damage production are discussed.

References (11)

N.G. Chechenin et al.
Nucl. Instr. and Meth.
(1986)
M. Okigawa et al.
Solid State Commun.
(1984)
I.B. Haibulin et al.
Fis. Tekh. Poluprov.
(1985)

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Cited by (2)

Vacancy-initiated laser sputtering from semiconductor surfaces
1993, Nuclear Inst. and Methods in Physics Research, B
We review recent experimental results of laser ablation of semiconductors and of submonolayer-sensitivity measurements of laser-pulse-induced particle emissions from cleaned surfaces of GaP and GaAs. It is pointed out that the particle emission yield below the ablation threshold decreases as irradiation is repeated, while that above the ablation threshold increases, leading finally to ablation. The ablation processes are discussed on the basis of the experimental observation of the subthreshold emissions, which are ascribed to be due to breaking of bonds of weakly bonded atoms around adatom- and step-type defects on surfaces due to cascade electronic excitation. It is shown that existing experimental results on laser ablation can be explained on the basis of the following mechanism: the ablation is initiated by laser-induced bond breaking of weakly bonded atoms around the vacancies, which leads to evolution of vacancy clusters not only in the original topmost surface layer but also in the original inner layers. It is emphasized that only weakly bonded atoms around vacancies and vacancy clusters can be sputtered, but yet massive erosion of the surface is induced.
Laser Induced Modification of n‐GaAs below the Classical Melting Threshold
1990, physica status solidi (a)

^∗: Department of Physics, Moscow State University, Moscow 119899, USSR.

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Section XI. Desorption induced by electronic transitionChanneling study of the orientational dependence of laser-induced damage in GaAs and GaP

Abstract

Nucl. Instr. and Meth.

Solid State Commun.

Fis. Tekh. Poluprov.

Section XI. Desorption induced by electronic transition
Channeling study of the orientational dependence of laser-induced damage in GaAs and GaP