Performance of the multianode cylindrical silicon drift detector in the CERES NA45 experiment: first results☆
References (7)
- et al.
Nucl. Instr. and Meth.
(1984) Nucl. Instr. and Meth.
(1986)Nucl. Instr. and Meth.
(1987)
Cited by (26)
Hadron blind Cherenkov counters
2020, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentCitation Excerpt :A short summary is given in Section 6. The set-up also included a novel silicon drift chamber (SiDC) that provided high-resolution vertex reconstruction and particle tracking to the interaction point [20] and a 64-pad silicon detector that was used to characterize the event centrality and to provide the first level trigger [21]. The challenge of the measurement is the same as described in the previous section for the CERES experiment and it is even enhanced by the higher multiplicities of charged particles, which are larger by about a factor of 2 at RHIC compared to the SPS [29].
Pixel Drift Detector (PixDD) – SIRIO: an X-ray spectroscopic system with high energy resolution at room temperature
2020, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentManufacturing uniform field silicon drift detector using double boron layer
2015, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentCitation Excerpt :The leakage current of a detector has three components: bulk generation current caused by thermal generation, diffusion leakage current caused by minority carrier׳s diffusion from un-depleted areas to the depletion region, and surface generation current caused by defects such as dangling bonds or scratches on the surface during processing. Surface leakage current increases with detector area and can surpass the bulk leakage current by a factor of 3–8 [9]. In order to lower the surface leakage current contribution, fabrication process steps on both sides of wafers have to be optimized to have damage free devices fabricated on front and backside of the wafers.
Silicon Drift Detectors development for position sensing
2007, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentReview of semiconductor drift detectors
2005, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated EquipmentNovel prototype Si detector development and processing at BNL
2002, Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- ☆
Work supported by the US Department of Energy under contract no. DE-AC02-76CH00016 and by the Italian INFN and MURST.
- 1
Present address: GSI Darmstadt, Germany.
- 2
Present address: Universität Bonn, Germany.