Radiation damage measurements on the SVX readout chip

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Abstract

The effects of ionizing radiation on the SVX Rev. D data acquisition integrated circuit are presented. This chip was fabricated in 3 μm CMOS technology and will be used to read out the silicon vertex subsystem of the CDF detector at the FNAL collider. Results include the change in the signal to noise ratio and the change in gain for the amplifier-discriminator circuit, and threshold and transconductance shifts for single test transistors included in the device.

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