A 10 MHz micropower CMOS front end for direct readout of pixel detectors

doi:10.1016/0168-9002(90)90355-A

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 290, Issue 1, 1 May 1990, Pages 149-157

https://doi.org/10.1016/0168-9002(90)90355-A Get rights and content

Abstract

In the framework of the CERN-LAA project for detector R and D, a micropower circuit of 200 μm×200μm with a current amplifier, a latched comparator and a digital memory element has been tested electrically and operated in connection with linear silicon detector arrays. The experimental direct-readout (DRO) chip comprises a matrix of 9×12 circuit cells and has been manufactured in a 3 μm CMOS technology. Particles and X-ray photons below 22 keV were detected, and thresholds can be set between 2000 and 20 000 e⁻. The noise is less than 4 keV FWHM or 500 e⁻ rms and the power dissipation per pixel element is 30 μW. The chip can be coupled to a detector matrix using bump bonding.

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^∗: Now with Smart Silicon Systems, Lausanne, Switzerland.

^∗∗: Also with Centre Suisse d'Electronique et de Microtechnique, Neuchâtel, Switzerland.

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A 10 MHz micropower CMOS front end for direct readout of pixel detectors

Abstract

Nucl. Instr. and Meth.

Nucl. Instr. and Meth.