Beam test results of an ion-implanted silicon strip detector on a 100 mm wafer

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Abstract

Results are presented from a beam test in the CERN SPS North Area of a silicon strip detector. The detector is directly coupled and has an active area of 32 × 58 mm and a strip pitch of 25 μm. It is processed on a 100 mm wafer. Spatial resolution of the detector equipped with LSI readout chips was measured to be 3.9 μm and the most probable signal to single channel noise ratio was 20.

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