IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning☆
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Work supported in part by the French CNRS, GDR86, by the Brasilian CNPq and by the Hungarian OTKA grants No. 1829 and 3265.
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Permanent address: Instituto de Física, UFRGS, Porto Alegre, Brazil.
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Permanent address: KFKI Research Institute for Materials Science, H-1525 Budapest, Hungary.
Copyright © 1994 Published by Elsevier B.V.