Characteristics of the radiation damage seen in the silicon microstrip detector of Fermilab experiment E771

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Abstract

The central region of the silicon microstrip detector used in Fermilab experiment E771 was subjected to a peak fluence of 9.5 × 1013 p/cm2 induced by 800 GeV protons over a two-month period. Fourteen 300 μm thick planes manufactured by Micron Semiconductor were operated at bias voltages ranging from 84 to 109 V. Analysis of data from low intensity beam triggers taken near the end of the run shows that the mean pulse height from our amplifiers began to decline at a fluence of approximately 2 × 1013 p/cm2 and fell to near zero by 6 × 1013 p/cm2. We show that the use of fast amplifiers contributed to this early loss of signal.

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