Probing terahertz electron dynamics in semiconductor nanostructures with the UC Santa Barbara FELs

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Abstract

The UCSB free electron lasers radiate quasi-cw tunable radiation from 120 GHz to 4.8 THz at the kilowatt power level. These lasers enable researchers to probe high frequency nonlinear electron transport in state-of-the-art semiconductor nanostructures. The impact of this research could have important consequences in the fields of high frequency semiconductor science and technology. Three experiments are described that demonstrate the application of FELs in exploring terahertz dynamics of semiconductor nanostructures: i) photon-assisted tunneling in a semiconductor superlattice; ii) dynamical response of a resonant tunneling diode; and iii) saturation spectroscopy of a single square quantum well.

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