Performance on test beam of the L3 double-sided silicon microstrip detector

doi:10.1016/0168-9002(94)90775-7

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volume 348, Issues 2–3, 1 September 1994, Pages 436-439

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Abstract

Two modules of the L3 Silicon Microvertex Detector (SMD) have been tested on beam. The active area of the modules consists of double sided silicon microstrip detectors; the implantation pitch is 25 μm and 50 μm in the junction and ohmic side, respectively. The detectors are read out by a VLSI radiation hard amplifier (SVX-H). The position resolution, with a readout pitch of 50 μm and 200 μm for the two sides, is determined to be 7.0 μm and 14.3 μm. A signal to noise ratio ⩾ 16 and a detection efficiency ⩾ 99% are measured for both sides.

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^∗: Corresponding author.

¹: Permanent address: World Laboratory, FBLJA Project, Geneva, Switzerland.

²: Permanent address: LAPP, Annecy, France.