Photoelectrochemical investigations on boron-doped chemically vapour-deposited diamond electrodes

https://doi.org/10.1016/1010-6030(92)80023-OGet rights and content

Abstract

Current-voltage, capacitance and photocurrent-wavelength measurements were carried out at the filament-assisted grown boron-doped (p-type) diamond electrodes forming the interface with aqueous electrolytes. Under xenon lamp irradiation, a photocurrent is generated in cathodic polarization, indicating p-type semiconductivity. From the capacitance measurements the flat-band potential of boron-doped diamond is found to be +0.7 V with respect to a saturated calomel electrode, which locates the conduction band near the vacuum level, corresponding to that reported by quantum photoyield measurements.

Based on these results, a tentative model of photocurrent generation has been explained as the exchange of charge by photogenerated electrons in the depletion region with the solution species via impurity levels present in the band gap region.

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    Citation Excerpt :

    They described the photoelectrochemical behavior of diamond by a model of photogeneration and separation of charges in the semiconductor layer. Another study investigated the photoelectrochemical properties of BDD electrodes prepared by chemical vapor deposition (CVD) and showed that their behavior corresponded to that of a p-type semiconductor [9]. Various methods for synthesizing artificial diamonds have been investigated since the early 1980s [10].

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