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Charge density wave transport in submicron antidot arrays in NbSe3

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Abstract:

We demonstrate for the first time that a periodic array of submicrometer holes (antidots) can be patterned into thin single NbSe3 crystals. We report on the study of Charge Density Wave (CDW) transport of the network of mesoscopic units between antidots. Size of the elementary unit can be as small as 0.5 μm along the chain axis and \(0.2\mu mX0.3\mu m\) in cross-section. We observe size effects for Ohmic residual resistance and in CDW transport current-voltage characteristics in submicronic networks.

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Authors and Affiliations

  1. Centre de Recherches sur les Très Basses Températures, Laboratoire associéà l'Université Joseph Fourier, CNRS, BP 166, 38042, Grenoble Cedex 9, France

    Y.I. Latyshev, B. Pannetier & P. Monceau

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  1. Y.I. Latyshev
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  2. B. Pannetier
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  3. P. Monceau
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Received: 25 November 1997 / Received in final form: 30 March 1998 / Accepted: 6 April 1998

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Latyshev, Y., Pannetier, B. & Monceau, P. Charge density wave transport in submicron antidot arrays in NbSe3 . Eur. Phys. J. B 3, 421–426 (1998). https://doi.org/10.1007/s100510050331

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  • DOI: https://doi.org/10.1007/s100510050331

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