Abstract
We study the ground states of the one-dimensional two-band Anderson type model in both the symmetric and the asymmetric cases. In the symmetric case the analytical expression of the charge-complex distribution function is formally derived, which is then applied to calculate the binding energy of the Kondo state. In the general asymmetric cases the behaviors of localized- and conduction-electron numbers are investigated as functions ofU and other parameters by numerically solving the integral equation. Particularly, for the asymmetric limitU≫2V 2 and ε F ∼ε a (ε F the Fermi level, ε a the localized level), when a nonintegral localized-electron valence is stabilized implying a valence fluctuation, ε F lies in the gap, whereas when it is an integral valence, ε F lies in the upper band. The former state is semiconducting and the latter is metallic.
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Kaga, H., Fujiwara, T. Ground state properties of the two-band Anderson-type model in one dimension. Z. Physik B - Condensed Matter 63, 189–197 (1986). https://doi.org/10.1007/BF01309238
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DOI: https://doi.org/10.1007/BF01309238