Abstract:
Unreconstructed interfaces may be prepared by evaporation of thick Pb films onto surfaces at room temperature. Current-voltage and capacitance-voltage characteristics of such Schottky contacts were measured in the temperature range between 140 and 300 K. The experimental data are analyzed by applying the thermionic-emission theory of inhomogeneous metal-semiconductor contacts as well as the “standard” thermionic-emission theory. From both methods the Schottky barrier height of laterally homogeneous contacts results as 0.724 eV. This value is by 74 meV larger than the previously observed barrier heights of laterally homogeneous interfaces. Similar differences were reported for unreconstructed and reconstructed Al- and contacts. The reduced barrier heights of all these interfaces are explained by the electric dipole associated with the stacking faults of reconstructions at surfaces and interfaces.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 14 May 1998 /Revised and Accepted: 7 September 1998
Rights and permissions
About this article
Cite this article
Schmitsdorf, R., Mönch, W. Influence of the interface structure on the barrier height of homogeneous Schottky contacts. Eur. Phys. J. B 7, 457–466 (1999). https://doi.org/10.1007/s100510050634
Issue Date:
DOI: https://doi.org/10.1007/s100510050634