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Transient magnetic fields in silicon ions traversing thin foils of Fe and Gd at high velocity

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Zeitschrift für Physik D Atoms, Molecules and Clusters

Abstract

Spin precessions of the28Si first 2+ state, caused by transient magnetic fields in thin Fe and Gd foils, were measured at a mean ion velocity of 7.5v 0 (v 0=c/137). Transient fields of 1.8 (3) kT and 1.1 (2) kT have been deduced for Fe and Gd, respectively. The observed field strengths are discussed in terms of the electron mean polarization in the SiK shell.

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Authors and Affiliations

  1. Dipartimento di Fisica dell'Università, Padova, Italy

    D. Bazzacco, F. Brandolini, P. Pavan & C. Rossi Alvarez

  2. Instituto Nazionale di Fisica Nucleare, Sezione di Padova, Italy

    D. Bazzacco, F. Brandolini, P. Pavan & C. Rossi Alvarez

  3. Physik-Department, Technische Universität München, Garching, Federal Republic of Germany

    K. -H. Speidel

Authors
  1. D. Bazzacco
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  2. F. Brandolini
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  3. P. Pavan
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  4. C. Rossi Alvarez
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  5. K. -H. Speidel
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Bazzacco, D., Brandolini, F., Pavan, P. et al. Transient magnetic fields in silicon ions traversing thin foils of Fe and Gd at high velocity. Z Phys D - Atoms, Molecules and Clusters 3, 1–5 (1986). https://doi.org/10.1007/BF01442341

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  • DOI: https://doi.org/10.1007/BF01442341

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