Abstract
Building RF/microwave SOI-CMOS integrated circuits has significant speed and power advantages over circuits built on bulk materials. High quality SOI material exists today which will meet today's device requirements; on-going development efforts will improve the material available for subsequent device generations.
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Auberton-Herve, A.J., Barge, T., Maleville, C. et al. High Volume RF/Microwave SOI-CMOS Integrated Circuits. Analog Integrated Circuits and Signal Processing 25, 85–91 (2000). https://doi.org/10.1023/A:1008346430921
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DOI: https://doi.org/10.1023/A:1008346430921