Single injection current in insulator with traps lying below the Fermi level

Abstract

Analytical expressions for the current-voltage characteristics have been given for the insulator containing significant amount of traps lying below the Fermi level. The mobility of the current carriers is varying with concentration in the insulator. It is shown that the complete current-voltage characteristic can be divided into four regimes which are having power laws for the characteristic from linear law in pure Ohm's law regime to cube law in space-charge-limited trap-free regime. There is a very large change in current occurring over a restricted change in voltage.