This is a preview of subscription content, log in via an institution to check access.
Literature cited
E. A. Barringer and M. K. Bowen, “Ceramic powder processing,” in: Proceedings of the 12th Automotive Materials Conference, Am. Ceram. Soc., Michigan (1984), pp. 285–297.
H. Windawi (ed.),Applied Electron Spectroscopy for Chemical Analysis, Wiley, New York (1982).
N. Van Hiey and D. Lichtman, “X-ray photoelectron analysis of thin film TiNx,”Appl Surf. Scl., No. 20(1/2), 186–192 (1984).
T. N. Wittberg, J. R. Hoenigman, W. E. Moddeman, et al., “AES and XPS of silicon nitride films of varying refractive indices,”J. Vac. Sci Technol., No. 15(2), 348–352 (1978).
T. Goto, F. Iton, K. Suzuki, et al., “ESCA study of amorphous CVD Si2N4-C composites,”J. Mat. Sci Lett., No. 2, 800–807 (1983).
P. A. Zhdan, A. I. Nizovskii, A V. Rzhanov, et al., “Auger and ESCA-examination of silicon nitride films after oxidation,”Dokl Akad. Nauk SSSR, Tekhn. Fiz. 273, No. 2, 334–336 (1983).
S. I. Raider, R. Flitsch, J. A. Aboaf, et al., “Surface oxidation of silicon nitride films,”J. Electrochem. Soc., No. 123, 560–565 (1976).
R. Karcher, L. Ley, and R. L. Johnson, “Electronic structure of hydrogenated and unhydrogenated amorphous SiNc (0 ≤ × ≤ 1.6). A photoemission study,”Phys. Rev. B, No. 30(4), 1896–1910 (1984).
Yu. M. Shul'ga, V. É. Loryan, V. K. Yatsimirskii, et al., “Surface of powder particles based on TiNx produced by the SHS method,”Poroshk. Metall., No. 11, l1–5 (1979).
Yu. M. Shul'ga, V. M. Martynenko, T. M. Moravskaya, et al., “Examination of the surface of silicon nitride powders produced by the SHS method,”Poroshk. Metall., No. 1, 48–54 (1984).
Yu. A Shul'ga and V. N. Troitskii, “Examination of the surface of highly dispersed titanium nitride by x-ray photoelectron spectroscopy,”Poroshk. Metall., No. 10, 1–4 (1979).
G. M. Kheidemane, Ya. P. Grabis, and T. N. Miller, “High-temperature synthesis of finely dispersed silicon nitride,”Izv. Akad. Nauk SSSR, Neorg. Mater. 15, No. 4, 595–598 (1979).
G. M. Kheidemane, Ya. P. Grabis, T. N. Miller, et al., “Formation of silicon nitride in a high-temperature nitrogen flow,”Fiz. Khim. Obrab. Mater., No. 3, 30–34 (1980).
I. Bertoti, G. Mink, A. Toth, et al., “XPS investigation of solid surfaces: results obtained by a recently installed commercial instrument,”Priod. Polytech. 30, No. 3–4, 213–222 (1986).
“Surface oxidation of silicon nitride. Applications note,”Physical Electronics 9, No. 8504, 20 (1985).
I. Bertot, M. Mohai, M. Revasz, and G. Alexander, “Surface composition of glasses: modification induced by chemical and thermal treatments,”Vacuum 37, No. 1–2, 129–131 (1987).
C. D. Waguer W. H. Riggs, L. E. Davis, et al.,Handbook XPS, Perkin-Elmer Corp., Eden Prairie (1979).
K. S. Robinson and P. M. Sherwood, “X-ray photoelectron spectroscopic studies of the surface of sputter ion-plated films,”Surface and Interface Analysis, No. 6(6), 261–266 (1984).
Author information
Authors and Affiliations
Additional information
Translated from Poroshkovaya Metallurgiya, No. 3(327), pp. 80–84, March, 1990.
Rights and permissions
About this article
Cite this article
Vaivads, Y.K., Miller, T.N., Kuzyukevich, A.A. et al. Examination of the surface of ultradispersed silicon nitride by photoelectron spectroscopy. Powder Metall Met Ceram 29, 241–244 (1990). https://doi.org/10.1007/BF00797971
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00797971