Skip to main content
SpringerLink
Log in

Pac studies of ion implanted silicon

  • Defects and Radiation Damage
  • Defects in Semiconductiors
  • Published:
Hyperfine Interactions Aims and scope Submit manuscript

Abstract

The annealing behaviour of radiation induced defects in ion implanted silicon is studied by the perturbed angular correlation method (PAC). Between 700 K and 1000 K the trapping and detrapping of vacancy-oxygen complexes is observed. In annealed p-Si a well defined, axially symmetric electric field gradient (EFG) appears at low temperatures. This EFG is oriented to the surface and not to any crystallographic direction. The size of the EFG depends strongly on the surface charge.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Frauenfelder and R.M. Steffen in: Alpha-, Beta-, and Gamma-Ray Spectroscopy, Vol. 2, ed. K. Siegbahn (North-Holland, Amsterdam 1968)

    Google Scholar 

  2. M. Deicher, G. Gruebel, E. Recknagel, Th. Wichert, Proc. Ion Beam Modification of Materials, Catania, 1986, to be published

  3. J. Bourgoin, M. Lannoo in: Point Defects in Semiconductors II, Springer series in Solid State Sciences, Vol. 22 (Springer, Berlin, Heidelberg, New York, 1981), p. 269.

    Google Scholar 

  4. H. Wolf, D. Forkel, M. Iwatschenko-Borho, S. Malzer, F. Meyer, and W. Witthuhn, this conference

  5. M. Deicher, G. Gruebel, E. Recknagel, Th. Wichert, and D. Forkel, Nucl. Instr. and Meth. in Phys. Rev. B13 (1986), 266.

    Google Scholar 

  6. A.S. Grove in: Physics and Technology of Semiconductor Devices, John Wiley and Sons, New York, 1967, p. 266.

    Google Scholar 

  7. S.M. Sze in: Physics of Semiconductor Devices, John Wiley and Sons, New York, 1981, p. 373.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin-Rommel-Stra\e 1, D-8520, Erlange, W-Germany

    D. Forkel, F. Meyer, W. Witthuhn & H. Wolf

  2. Physikalisches Institut der Universität Konstanz, Bücklestra\e 13, D-7750, Konstanz, W-Germany

    M. Deicher

  3. Physikalisches Institut der Universität Göttingen, W-Germany

    M. Uhrmacher

Authors
  1. D. Forkel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. F. Meyer
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. W. Witthuhn
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Wolf
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Deicher
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. Uhrmacher
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Forkel, D., Meyer, F., Witthuhn, W. et al. Pac studies of ion implanted silicon. Hyperfine Interact 35, 715–718 (1987). https://doi.org/10.1007/BF02394483

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02394483

Keywords

Search

Navigation