Abstract
The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT 1 relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 1010 s−1 (corresponding diffusion constantD≈10−6 cm2s−1) at lower temperatures as well as at room temperature.
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Kadono, R., Kiefl, R.F., Brewer, J.H. et al. Quantum diffusion of muonium in GaAs. Hyperfine Interact 64, 635–640 (1991). https://doi.org/10.1007/BF02396198
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DOI: https://doi.org/10.1007/BF02396198