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Bonding mechanism between silicon carbide and thin foils of reactive metals

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Abstract

Pressureless-sintered SiC pieces and SiC single crystals were joined with foils of reactive metals at 1500° C (1773 K) for titanium and zirconium foils or at 1000° C (1273 K) for Al/Ti/Al foils. Bend testing at various temperatures up to 1400° C (1673 K), optical and electron microscopy, and electron-probe X-ray microanalysis studies were carried out on the specimens. From the results, it was concluded that the fairly high bond strength of titanium-foil joined SiC specimens might be attributed to the formation of a Ti3SiC2 compound, since good lattice matching between SiC and Ti3SiC2 was obtained in the SiC single crystals. Also in the Al/Ti/Al-foil joined SiC, high bond strength was obtained, but it decreased steeply at 600° C (873 K) because of a retained aluminium phase. The bond strength in the zirconium-foil joined SiC was low.

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Author notes

  1. M. Endo

    Present address: Toshiba Corporation, Shinsugita, Isogo-Ku, 235, Yokohama, Japan

Authors and Affiliations

  1. The Research Institute for Iron, Steel and Other Metals, Tohoku University, 980, Sendai, Japan

    S. Morozumi, M. Endo & M. Kikuchi

  2. Asahi Glass Co Ltd, Hazawa, Kanagawa-ku, 221, Yokohama, Japan

    K. Hamajima

Authors
  1. S. Morozumi
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  2. M. Endo
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  3. M. Kikuchi
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  4. K. Hamajima
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Morozumi, S., Endo, M., Kikuchi, M. et al. Bonding mechanism between silicon carbide and thin foils of reactive metals. J Mater Sci 20, 3976–3982 (1985). https://doi.org/10.1007/BF00552387

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  • DOI: https://doi.org/10.1007/BF00552387

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