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A study of the growth mechanism of Ni2Si phase formed at Ni/a-Si interface

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Journal of Materials Science Letters

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References

  1. S. P. Muraka, “Silicide for VLSI Applications” (Academic Press, SanDiego, 1983).

    Google Scholar 

  2. K. N. Tu and J. W. Mayer, “Silicide Formation in Thin Film-Interdiffusionand Reactions” edited by J. M. Poate, K. N. Tu and J. W. Mayer (Wiley, New York, 1978).

    Google Scholar 

  3. R.W. Balluffi and J. M. Blakely, Thin Solid Films 25 (1975) 363.

    Article  CAS  Google Scholar 

  4. V.E. Borisenko, K. I. Ivanenko and E. A. Krushevski, ibid. 250 (1994) 53.

    Article  CAS  Google Scholar 

  5. J. O. Olowolafe, M.-A. Nicolet and J. W. Mayer, ibid. 38 (1976) 143.

    Article  CAS  Google Scholar 

  6. C.-D. Lien and M.-A. Nicolet, ibid. 143 (1986) 63.

    Article  CAS  Google Scholar 

  7. A. J. Brunner, E. Ma and M.-A. Nicolet,Appl. Phys. A 48 (1989) 229.

    Article  Google Scholar 

  8. M. Naton and S. W. Duncan, Thin Solid Films 123 (1985) 69.

    Article  Google Scholar 

  9. G. J. Huang and L. J. Chen, J. Appl. Phys. 78 (1995)929.

    Article  CAS  Google Scholar 

  10. J. E. E. Baglin, H. A. Atwater, D. Gupta and F. M. D'Heurle, ThinSolid Films 93 (1982) 255.

    Article  CAS  Google Scholar 

  11. R. T. Tung, J. M. Gibson and J. M. Poate,Phys. Rev. Lett. 50 (1983) 429.

    Article  CAS  Google Scholar 

  12. K. Affolter, X.-A. Zhao and M.-A. Nicolet, J. Appl. Phys. 58 (1985) 3087.

    Article  CAS  Google Scholar 

  13. F. D'Heurle, S. Petersson, L. Stolt and B. Strizker, J. Appl. Phys. 53 (1982) 5678.sssssss

    Article  Google Scholar 

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Authors and Affiliations

  1. AMA Device Team, Research Institute 2, Daewoo Electronics Co., Ltd., C.P.O. Box 8003, Seoul, Korea

    Hong-Sung Kim

  2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon, Korea

    Yoon-Joong Yong & Jai-Young Lee

  3. Electronic Materials Research Institute, LG Chemical Ltd., P.O. Box 61, Taejon, Korea

    Ki-Young Lee

Authors
  1. Hong-Sung Kim
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  2. Yoon-Joong Yong
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  3. Jai-Young Lee
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  4. Ki-Young Lee
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Kim, HS., Yong, YJ., Lee, JY. et al. A study of the growth mechanism of Ni2Si phase formed at Ni/a-Si interface. Journal of Materials Science Letters 16, 560–562 (1997). https://doi.org/10.1023/A:1018517905813

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