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Effect of Annealing on the Carrier Concentrations and the Deep Levels in CdTe Single Crystals

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Journal of Materials Science Letters

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References

  1. P. Siffert, A. Cornet, R. Stuck, R. Triboulet and Y. Marfaing, IEEE Trans. Nucl. Sci. NS-22 (1975) 211.

    Google Scholar 

  2. T. Hazlett, H. Cole, M. R. Squillante, G. Entine, G. Sugars, W. Fecych and O. Tench, ibid. NS-33 (1986) 332.

    Google Scholar 

  3. A. Bourret, P. Fuoss, G. Feuillet and S. Tatarenko, Phys. Rev. Lett. 70(1993) 311.

    PubMed  Google Scholar 

  4. T. Baron, S. Tatarenko, K. Saminadayar, N. Magnea and J. Fontenille, Appl. Phys. Lett. 65 (1994) 1284.

    Google Scholar 

  5. J. Hamann, A. Burchard, M. Deicher, T. Filz, V. Ostheimer, C. Schmitz, H. Wolf and T. Wichert, ibid. 72(1998) 3029.

    Google Scholar 

  6. R. K. Willardson and A. C. Beer(eds), ‘Semiconductors and semimetals, vol. 18’(Academic Press, New York, 1981).

    Google Scholar 

  7. L. Svob, Y. Marfaing, B. Clerjaud, D. Cote, A. Lebkiri and R. Druilhe, J. Cryst. Growth 159(1996) 72.

    Google Scholar 

  8. S. M. Sze, ‘VLSI technology’ (McGraw-Hill, New York, 1988).

    Google Scholar 

  9. H. S. Kang, S. W. Choi and H. I. Lee, New Phys. 28 (1988) 368.

    Google Scholar 

  10. H. I. Lee, ibid. 1(1988) 150.

    Google Scholar 

  11. F. J. Bryant and D. H. J. Totterdell, Radiat. Eff. 9 (1971) 115.

    Google Scholar 

  12. T. Taguchi, J. Shirafuji and Y. Inuishi, Jpn. J. Appl. Phys. 12(1973) 1558.

    Google Scholar 

  13. J. Lee and N. C. Giles, J. Appl. Phys. 78(1995) 1991.

    Google Scholar 

  14. D. De Nobel, Philips Res. Rep. 14(1959) 361.

    Google Scholar 

  15. M. R. Lorenz and B. Segall, Phys. Lett. 7(1963) 18.

    Google Scholar 

  16. N. V. Agrinskaya, E. N. Arkad'eva and O. A. Matveev, Sov. Phys. Semicond. 4(1970) 306.

    Google Scholar 

  17. M. R. Lorenz, B. Segall and H. H. Woodbery, Phys. Rev. A 7(1964) 134.

    Google Scholar 

  18. N. V. Agrinskaya, G. I. Aleksandrova and E. N. Arkad'eva, Sov. Phys. Semicond. 8(1974) 202.

    Google Scholar 

  19. C. E. Barnes and K. Zarnio, J. Appl. Phys. 46(1975) 3959.

    Google Scholar 

  20. D. M. Hofmann, P. Omling, H. G. Grimmeiss, B. K. Meyer, K. W. Benz and D. Sinerius, Phys. Rev. B 45(1992) 6247.

    Google Scholar 

  21. B. Biglari, M. Samimi, H. Hage-Ali, J. M. Koebel and P. Siffert, J. Appl. Phys. 65(1989) 1112.

    Google Scholar 

  22. R. T. Collins and T. C. Mcgill, J. Vac. Sci. Technol. A 1(1983) 1633.

    Google Scholar 

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Lee, H.I., Woo, Y.D., Kang, H.S. et al. Effect of Annealing on the Carrier Concentrations and the Deep Levels in CdTe Single Crystals. Journal of Materials Science Letters 18, 695–697 (1999). https://doi.org/10.1023/A:1006688010827

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