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Growth and misfit accommodation of β-SiC precipitates in silicon as implanted by oxygen

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Physics Department, University of Thessaloniki, 540 06, Thessaloniki, Greece

    J. G. Antonopoulos & J. Stoemenos

  2. Division d'Electronique de Technologie et d'Instrumentation CEN, Commissariat à l'Energie Atomique, 38041, Grenoble, France

    C. Jaussaud & J. Margail

Authors
  1. J. G. Antonopoulos
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  2. J. Stoemenos
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  3. C. Jaussaud
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  4. J. Margail
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Antonopoulos, J.G., Stoemenos, J., Jaussaud, C. et al. Growth and misfit accommodation of β-SiC precipitates in silicon as implanted by oxygen. J Mater Sci Lett 8, 1374–1377 (1989). https://doi.org/10.1007/BF00720191

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  • DOI: https://doi.org/10.1007/BF00720191

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