Skip to main content
Log in

Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio

  • Published:
Journal of Materials Science Letters

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. C. COBIANU and C. PAVELESCU,J. Electrochem. Soc. 130 (1983) 1888.

    Google Scholar 

  2. Idem, Thin Solid Films 117 (1984) 211.

    Google Scholar 

  3. C. PAVELESCU, C. COBIANU and A. VANCU,J. Electrochem. Soc. 130 (1983) 975.

    Google Scholar 

  4. C. PAVELESCU, C. COBIANU, L. CONDRIUC and E. SEGAL,Thin Solid Films 114 (1984) 291.

    Google Scholar 

  5. C. PAVELESCU, C. COBIANU and E. SEGAL,J. Mater. Sci. Lett. 3 (1984) 643.

    Google Scholar 

  6. Idem, ibid.4 (1985) 1280.

    Google Scholar 

  7. C. COBIANU and C. PAVELESCU,Thin Solid Films 102 (1983) 361.

    Google Scholar 

  8. W. KERN,RCA Rev. 29 (1968) 557.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pavelescu, C., Cobianu, C. Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio. J Mater Sci Lett 9, 143–144 (1990). https://doi.org/10.1007/BF00727697

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00727697

Keywords

Navigation