Abstract
Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi — empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from element concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values.
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Takeuchi, T., Nakano, Y., Fukuda, T. et al. Determination of trace element in a silicon single crystal. Journal of Radioanalytical and Nuclear Chemistry, Articles 168, 367–376 (1993). https://doi.org/10.1007/BF02040516
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DOI: https://doi.org/10.1007/BF02040516