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Model for degradation of band gap photo-luminescence in GaAs

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Il Nuovo Cimento D

Summary

Degradation of near band gap photo-luminescence emission in GaAs with time of exposure to low power, c.w. laser excitation at room temperature is quantitatively described by a model based on defect reactions that are promoted by trapping and recombination of excess carriers at nonradiative recombination sites. The proposed model accurately describes the observed degradation rate, its power and temperature dependence, as well as the absence of degradation at a surface with shallow ion implantation.

Riassunto

La diminuzione della luminescenza (vicino al band gap) nel GaAs durante illuminazione continua a bassa intensità e a temperatura ambiente è quantitativamente spiegata da un modello in cui le reazioni tra i difetti reticolari in prossimità della superficie sono promosse dall’intrappolamento e dalla ricombinazione delle cariche elettriche in centri di ricombinazione senza emissione luminosa. Il modello che proponiamo spiega accuratamente le osservazioni sperimentali: la velocità di diminuzione della luminescenza stessa, la sua dipendenza dall’intensità dell’illuminazione esterna e dalla temperatura e la mancata diminuzione della luminescenza quando il GaAs è impiantato a bassa profondità.

Резюме

Количественно описывается деградация фото-люминесцентного излучения вблизи запрещенной зоны в GaAs со временем экспозиции c.w.-лазерным возбуждением малой мощности при комнатной температуре с помощью модели, которая основана на реакции дефектов, которые стимулируют захват и рекомбинацию носителей в нерадиационных узлах рекомбинации. Предложенная модель описывает наблюдаемую интенсивность деградации, зависимость деградации от мощности и температуры, а также отсутствие деградации на поверхности в случае неглубокой имплантации ионов.

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Authors and Affiliations

  1. T.J. Watson Research Laboratory, IBM, P.O. Box 218, 10 598, Yorktown Heights, New York, USA

    D. Guidotti, E. Hasan, H. J. Hovel & M. Albert

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  1. D. Guidotti
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  2. E. Hasan
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  3. H. J. Hovel
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  4. M. Albert
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Summer student from the Materials Sciences Department at Massachusetts Institute of Technology, Cambridge, Mass., USA.

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Guidotti, D., Hasan, E., Hovel, H.J. et al. Model for degradation of band gap photo-luminescence in GaAs. Il Nuovo Cimento D 11, 583–613 (1989). https://doi.org/10.1007/BF02457514

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PACS 73.25

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