Summary
Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
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Bitz, A., Jordan, C., Di Ventra, M. et al. Optical study on ultrathin InAs/InP single quantum wells. Il Nuovo Cimento D 17, 1367–1370 (1995). https://doi.org/10.1007/BF02457211
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DOI: https://doi.org/10.1007/BF02457211