Summary
We have measured the optical properties of a series of strained In x Ga1−x As/GaAs (x=0.09) double-quantum-well structures with different barrier thicknesses grown on (111)B-orientated GaAs substrates. We observed an increase in the Stark shift due to the internal-strain-induced piezoelectric field as a function of increased barrier thickness. As the optical excitation density was increased the Stark shift was found to decrease due to photoscreening of the internal field by the spatially separated electron/hole populations. The extent of the photoscreening was found to be ultimately limited by occupancy of the second heavy-hole subband. Good agreement was found between the measured photoscreening of the piezoelectric field and self-consistent solutions of Schrödinger's and Poisson's equations.
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Moran, M., Dawson, P. & Moore, K.J. Carrier density dependence of the stark shift in (111) InGaAs/GaAs double-quantum-well structures. Il Nuovo Cimento D 17, 1619–1623 (1995). https://doi.org/10.1007/BF02457253
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DOI: https://doi.org/10.1007/BF02457253