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Pseudodirect biexcitons in GaAs/AlAs type-II superlattices

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Il Nuovo Cimento D

Summary

We report on the biexciton formation of the pseudodirect exciton consisting of the AlAs-X z electron and the GaAs-Γ heavy hole in (GaAs) m /(AlAs) m type-II superlattices withm=10, 12, and 13 monolayers. The photoluminescence lineshape of the pseudodirect exciton exhibits a doublet feature having an energy separation of ∼3 meV at the excitation power of the order of mW/cm2 in all the samples, and the low-energy band grows superlinearly. The transient profiles of the doublet photoluminescence band early indicate the biexciton formation: the delay of the rise of the biexciton photoluminescence on the low-energy side and its shorter decay time in comparison with the exciton photoluminescence.

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Nakayama, M., Suyama, K. & Nishimura, H. Pseudodirect biexcitons in GaAs/AlAs type-II superlattices. Il Nuovo Cimento D 17, 1629–1633 (1995). https://doi.org/10.1007/BF02457255

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  • DOI: https://doi.org/10.1007/BF02457255

PACS 78.66.Fd

PACS 71.35

PACS 78.55.Cr

PACS 01.30.Cc

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