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Growth of Pb1−x Mn x Te thin films by hot-wall epitaxy

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Il Nuovo Cimento D

Summary

Thin epitaxial films ((0.5÷5) μm) of Pb1−x Mn x Te (0≤x≤0.03) have been grown on BaF2 substrates by a modified hotwall technique. The evaporation system has three independent sources containing PbTe, Mn and Te, respectively. Bothn- andp-type films with carrier concentrations in the range (2÷10)·1017 cm−3 and with mobilities up to 105 cm2/V s have been prepared.

Riassunto

Strati epitassiali sottili ((0.5÷5) μm) di Pb1−x Mn x Te (0≤x≤0.03) sono stati accresciuti su substrati di BaF2 con una tecnica modificata di riscaldamento della parete. Il sistema di evaporazione ha tre sorgenti indipendenti che contengono PbTe, Mn e Te, rispettivamente. Sono stati preparati sia film di tipon che di tipop con concentrazione di portatori nell'intervallo (2÷10)·1017 cm−3 e con mobilità fino a 105 cm2/V s.

Резюме

Тонкие эпитаксиальные пленки ((0.5÷5) мкм) Pb1−x Mn x Te (0≤x≤0.03) выращиваются на подложках BaF2 с помощйю модифицированного метода »горячей стенки». Испарителяная система имеет три независимых источника, содержаших соответственно PbTe, Mn и Te. Приготовляются тонкие пленкиn-иp-типов с концентрациями носителей в области (2÷10)·1017 см−3 и с подвижностями вплоть до 105 см2/Вс.

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Authors and Affiliations

  1. Institut für Experimentalphysik, Universität Linz, 4040, Linz, Austria

    G. Elsinger, L. Palmetshofer & A. Lopez-Otero

Authors
  1. G. Elsinger
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  2. L. Palmetshofer
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  3. A. Lopez-Otero
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Elsinger, G., Palmetshofer, L. & Lopez-Otero, A. Growth of Pb1−x Mn x Te thin films by hot-wall epitaxy. Il Nuovo Cimento D 2, 1869–1874 (1983). https://doi.org/10.1007/BF02457878

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  • DOI: https://doi.org/10.1007/BF02457878

PACS. 68.55

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