Abstract
(C5H5)2Fe and Fe(CO)5 were used as the 3d transition-metal dopant sources in the growth of semi-insulating InP epitaxial layers by low-pressure metal-organic chemical vapour deposition (MOCVD). From the bright- and dark-field images of transmission electron microscopy (TEM) analysis, many precipitates were observed. Three extra peaks in the X-ray diffraction pattern were found. The peaks of band-band recombination, donor-acceptor pair recombination transitions and the recombination of donor-acceptor pair with one-phonon emission were observed in the short-wavelength range of low-temperature photoluminescence measurement. Three Fe-related peaks were observed at 0.7079, 0.6897 and 0.6683 Ev. For a wide range (10–600) of In/Fe molar fraction, the resistivity remained at high values (about 108 Ω cm) and the highest resistivity appeared at 5 × 108 Ω cm for a 1 Μm layer with a breakdown voltage of 9 V.
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Wu, C.C., Feng, M.S., Lin, K.C. et al. Semi-insulating iron-doped indium phosphide grown by low-pressure metal-organic chemical vapour deposition. J Mater Sci: Mater Electron 4, 62–66 (1993). https://doi.org/10.1007/BF00226636
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DOI: https://doi.org/10.1007/BF00226636