Abstract
A higher order theoretical model is presented to describe the behaviour of FIR point contact Schottky diodes for high signal levels and/or high bias currents. This model includes non-linear perturbation on the voltage induced at the Schottky junction. Its fit to experimental results in case of envelope detection is also discussed and compared to the fit determined with our previous non-perturbation theory.
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References
Waksberg, A. and Drèze, C., (1984). Int. J. Infrared and MM Waves, Vol. 5 (10) p. 1349.
Drèze, C., Waksberg, A. and Davis, B.W., (1984). Int. J. Infrared and MM Waves Vol. 5 (10) p. 1361.
Drèze, C., Waksberg, A. and Davis, B.W., (1985), Int. J. Infrared and MM Waves, Vol. 6 (5) p. 387.
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Waksberg, A., Dreze, C. Low frequency characteristics of a quasioptical schottky diode detector. Part III: Higher order theory. Int J Infrared Milli Waves 6, 1203–1216 (1985). https://doi.org/10.1007/BF01013210
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DOI: https://doi.org/10.1007/BF01013210