Abstract
The thermal conductivity of molten InSb in the temperature range between 800 and 870 K was measured by the transient hot-wire method using a ceramic probe. The probe was fabricated from a tungsten wire printed on an alumina substrate and coated with a thin alumina layer. The thermal conductivity was found to be about 18 W· m−·K−at the melting point and increased moderately with increasing temperature. The thermal conductivity of alumina used as the substrate for the probe was also measured in the same temperature range.
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On leave from NEC Corporation.
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Nakamura, S., Hibiya, T. & Yamamoto, F. Measurement of the thermal conductivity of molten semiconductors. Int J Thermophys 9, 933–940 (1988). https://doi.org/10.1007/BF01133261
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DOI: https://doi.org/10.1007/BF01133261