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A model for the etching of silicon in SF6/O2 plasmas

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Abstract

A model has been developed to describe the chemistry which occurs in SF6/O2 plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF6/O2 plasmas is discussed.

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Authors and Affiliations

  1. CSIRO Division of Applied Physics, 2070, Lindfield, Australia

    K. R. Ryan & I. C. Plumb

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  1. K. R. Ryan
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  2. I. C. Plumb
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Ryan, K.R., Plumb, I.C. A model for the etching of silicon in SF6/O2 plasmas. Plasma Chem Plasma Process 10, 207–229 (1990). https://doi.org/10.1007/BF01447127

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  • DOI: https://doi.org/10.1007/BF01447127

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