Abstract
A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for InGaP, and 2.2 μm/min for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: The etch rates increased substantially with increasing ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than ICl/Ar, but the etched surface morphologies were fairly poor for both chemistries.
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Hahn, Y.B., Hays, D.C., Cho, H. et al. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs. Plasma Chemistry and Plasma Processing 20, 417–427 (2000). https://doi.org/10.1023/A:1007052629883
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DOI: https://doi.org/10.1023/A:1007052629883