Abstract
Scanning tunneling microscopy and reflection high-energy electron diffraction under ultrahigh vacuum conditions were used to make an in situ study of atomic structures at the surface of an InAs/GaAs heterostructure grown by molecular-beam epitaxy. It was observed that the deposition of approximately 0.3 ML of indium on an arsenic-enriched GaAs(001)-2 × 4 surface leads to the formation of the 4 × 2 phase while the deposition of 0.6 ML indium leads to the appearance of a new 6 × 2 reconstruction. It is shown that layer-by-layer two-dimensional epitaxial growth of InAs on GaAs(001) as far as 13 monolayers can only be achieved if the growth front reproduces the 4 × 2 or 6 × 2 symmetry of the substrate and models of 4 × 2 and 6 × 2 reconstructions are proposed. Atomic-resolution images of faceted planes on the surface of three-dimensional islands in an InAs/GaAs(001) system were obtained for the first time and structural models of these were developed.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 118, No. 5, 2000, pp. 1153–1166.
Original Russian Text Copyright © 2000 by Bakhtizin, Hasegawa, Xue, Sakurai.
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Bakhtizin, R.Z., Hasegawa, Y., Xue, Q.K. et al. Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs(001) surface: in situ observation of quantum dot growth. J. Exp. Theor. Phys. 91, 1000–1010 (2000). https://doi.org/10.1134/1.1334990
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DOI: https://doi.org/10.1134/1.1334990