Abstract
The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resistivity ρ grows with a decreasing derivative dρ/dT, and (ii) the positive magnetoresistance diminishes from about 40% at T=0.4 K to about 1% at T=4.2 K. The results are explained in terms of a temperature-dependent mutual scattering of the holes, accompanied by momentum transfer between two different spin-split subbands.
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Pis’ma Zh. Éksp. Teor. Fiz. 67, No. 2, 101–106 (25 January 1998)
Published in English in the original Russian journal. Edited by Steve Torstveit.
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Murzin, S.S., Dorozhkin, S.I., Landwehr, G. et al. Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures. Jetp Lett. 67, 113–119 (1998). https://doi.org/10.1134/1.567643
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DOI: https://doi.org/10.1134/1.567643