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Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas

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Abstract

Magnetotransport properties of ballistic ring interferometers made on the basis of 2D electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers are studied. An asymmetry of magnetoresistance and a phase reversal in h/e oscillations are observed when the bias voltage across the ring exceeds kT/e.

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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 72, No. 4, 2000, pp. 300–305.

Original Russian Text Copyright © 2000 by Bykov, Bakarov, Litvin, Toropov.

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Bykov, A.A., Bakarov, A.K., Litvin, L.V. et al. Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas. Jetp Lett. 72, 209–212 (2000). https://doi.org/10.1134/1.1320115

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  • DOI: https://doi.org/10.1134/1.1320115

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