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Superconductor/ferroelectric epitaxial heterostructures for tunable microwave devices

  • Metals. Superconductors
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Abstract

The formation of epitaxial heterostructures including YBa2Cu3O7−δ and SrTiO3 thin films on R-plane sapphire substrates has been studied. The thin CeO2 layer and the CeO2/SrBi2Nb2O9 epitaxial bilayer served as buffers. The temperature dependence of the dielectric permittivity ɛ of the SrTiO3 film behaved in essentially different ways when incorporated in the YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ and in Ag/SrTiO3/YBa2Cu3O7−δ capacitor structures. An external bias U b=±2.5 V applied to a plane-parallel YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ capacitor structure (T<100 K) reduced the ɛ of the SrTiO3 film to one half its original value.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    Yu. A. Boikov

  2. Physics Department, Chalmers University of Technology, S-41296, Göteborg, Sweden

    Z. G. Ivanov & T. Claeson

Authors
  1. Yu. A. Boikov
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  2. Z. G. Ivanov
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  3. T. Claeson
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 39, 222–227 (February 1997)

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Boikov, Y.A., Ivanov, Z.G. & Claeson, T. Superconductor/ferroelectric epitaxial heterostructures for tunable microwave devices. Phys. Solid State 39, 195–199 (1997). https://doi.org/10.1134/1.1129782

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  • DOI: https://doi.org/10.1134/1.1129782

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