Epitaxial combination of NdBa₂Cu₃O_7−δ /SrTiO₃: growth characteristics, structure, and parameters

Abstract

We have studied the growth characteristics, structure, and parameters of the epitaxial heterostructures (001)NdBa₂Cu₃O_7−δ /(100)SrTiO₃/(001)NdBa₂Cu₃O_7−δ grown by laser ablation on a (100)LaAlO₃ substrate with a thin (∼2 nm) YBa₂Cu₃O_7−δ intermediate layer. The use of an YBa₂Cu₃O_7−δ intermediate layer promotes layered growth of the (200 nm) NdBa₂Cu₃O_7−δ layer, whose free-surface roughness is 4–5 nm. The resistance of the NdBa₂Cu₃O_7−δ layers began to fall off abruptly at T=92 K, and at T≈87 K it vanished completely. The critical current density in the NdBa₂Cu₃O_7−δ layers at T=76 K exceeded 10⁶ cm² A/cm². The dielectric constant of the (400 nm) SrTiO₃ layer sandwiched between the NdBa₂Cu₃O_7−δ epitaxial layers grew by roughly threefold as the temperature was lowered in the interval 300–4.2 K. When a bias voltage of ±2.5V was applied to the NdBa₂Cu₃O_7−δ electrodes, the relative dielectric constant of the (400 nm) SrTiO₃ intermediate layer fell from 1150 to 400 (T=32 K, f=100 kHz). The conductivity of the SrTiO₃ intermediate layer in the direction perpendicular to the substrate plane increased with temperature and the electric field strength.